The authors of recent achievements write about it on the following pages Sciences. As they explain, it is a material that is only 1/100,000 the thickness of a human hair. This ferroelectric material is intended to provide memory systems with a very long service life. Ferroelectric materials are attracting interest due to their important role in the development of artificial intelligence and other technologies.
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It features low power consumption and the ability to perform lossless reads and fast writes. Moreover, its condition can be affected by the use of an electric field, the effect of which continues even after this field is removed. This principle of operation may bring to mind the operation of memory media.
Given the fierce technological competition between China and the United States, recent developments will be extremely important. The current limitation of ferroelectricity has been a phenomenon called photoelectric fatigue. As a result, efficiency decreases and the risk of failure increases. Wanting to avoid these complications, the Chinese organized large-scale experiments.
The material designed by Chinese engineers can be used to produce high-performance, long-lasting memory media
As they stated, the key to success should be to create ferroelectric materials layer by layer. They performed artificial intelligence-based simulations that helped them understand that sliding 2D ferroelectric materials move as a unit during charge transfer when an electric field acts on them. In this alternative, the phenomenon of ferroelectric fatigue does not occur.
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This is how the material known as 3R-MoS was created2. During testing, members of the research team noticed that despite millions of cycles, the performance degradation was zero. This leads to the conclusion that there are no restrictions in writing and reading. This in turn paves the way for the production of memory media with truly amazing durability and many applications.
