In the latest scientific article published on July 1, 2024 in the journal Materials Today Physics, we can read about a successful attempt to create a material whose capabilities exceed most semiconductors available on the market.
However, this is no ordinary material, because – as physicists point out – it is literally built atom by atom. Nevertheless, the effect is enormous. Tests on an extremely thin crystalline layer confirmed that electrons are able to move in this material up to seven times faster than in standard semiconductors. Needless to say, such a material, if it can be used in electronic devices, could greatly improve their performance.
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Ademite tetragonalas the newly developed material is called, occurs in an extremely thin layer, a thousand times thinner than the thickness of a human hair (about 100 nanometers). The process of producing it is extremely complex. Scientists use the molecular beam method for this purpose. In other words, precisely directed beams of molecules build up the material atom by atom. Although this method is extremely difficult, it allows the creation of layers that are practically free of defects, which will have a significant impact on the speed of electron movement in an electric field.
In commonly used semiconductors, electrons move at speeds of up to 1400 cm^2/Vs. In the case of the newly developed material, the speed increases to 10000 cm^2/Vs.
So, this is not an improvement in performance, but a real qualitative leap. Devices using such materials (if this actually happens) will generate less heat on the one hand, and on the other hand, consume much less energy. It turns out that future devices may eliminate very common drawbacks.
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The conclusions are clear. Scientists need to improve methods for producing the material on a large scale. Unlike the semiconductors used so far, this new material, the researchers point out, would be a real highway for electrons, without any traffic. By comparison, previous semiconductors would resemble the cobbled streets of Poznan, especially during rush hour.
How were the speeds of electrons measured in the new semiconductor? After forming a crystalline layer of the new material, the researchers placed it in an extremely cold environment and in a suitable magnetic field. It was then connected to electricity and the quantum oscillations resulting from the interaction of electrical resistance and the magnetic field were measured.
Because the material has almost no defects, the electrons flew through it at incredible speeds. The researchers suspect that improving the material’s production process could increase these speeds even further.
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